Power module package and method for fabricating the same

ABSTRACT

Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: first and second lead frames arranged to face each other, both or either of the first and second frames being made of aluminum; anodized layers formed on portions of the lead frame(s) made of aluminum in the first and second lead frames; and semiconductor devices mounted on first surfaces of the first and second lead frames.

CROSS REFERENCE TO RELATED APPLICATION

This application claims the benefit of Korean Patent Application No.10-2011-0058468, filed on Jun. 16, 2011, entitled “Power Module Packageand Method for

Manufacturing the Same”, which is hereby incorporated by reference inits entirety into this application.

BACKGROUND OF THE INVENTION

1. Technical Field

The present invention relates to a power module package and a method forfabricating the same.

2. Description of the Related Art

As energy usage increases over the world, a large interest has begun tofocus on effective use of restricted energy. Accordingly, utilization ofan inverter to which an intelligent power module (IPM) for efficientconversion used in the existing home or industrial products is appliedis accelerating.

As the application of this power module is expanding, high integration,high capacity and miniaturization are increasingly required by themarket. For this reason, the solution to heat generation problem ofelectronic parts becomes an important issue.

Therefore, there is required a high heat-radiation package structure forsolving the problem with respect to generation of heat, in order toincrease efficiency and secure high reliability in the power module.

SUMMARY OF THE INVENTION

The present invention has been made in an effort to provide a powermodule package capable of effectively removing the heat generated fromsemiconductor devices and a method for fabricating the same.

Further, the present invention has been made in an effort to provide apower module package capable of being easily fabricated and reducing themodule fabrication costs.

According to a preferred embodiment of the present invention, there isprovided a power module package, including: first and second lead framesarranged to face each other, both or either of the first and secondframes being made of aluminum; anodized layers formed on portions of thelead frame(s) made of aluminum in the first and second lead frames; andsemiconductor devices mounted on first surfaces of the first and secondlead frames.

The anodized layers may be formed on the regions where the semiconductordevices are to be mounted, in the first surfaces of the first and secondlead frames, and on second surfaces of the first and second lead frames.

The anodized layers may be formed on the second surfaces of the firstand second lead frames.

The semiconductor devices may include a power device and a controldevice mounted on the first surfaces of the first lead frame and thesecond lead frame, respectively.

The first lead frame may be made of aluminum, and the power device maybe mounted on the first surface of the first lead frame.

The power module package may further include metal layers for circuit onthe regions where the semiconductor devices are to be mounted, in thefirst surfaces of the first and second lead frames. Here, the metallayers for circuit may be formed between the anodized layers and thesemiconductor devices.

The power module package may further include wires for electricconnection between the semiconductor devices and the first and secondlead frames, or between the semiconductor devices.

The power module package may further include a molding covering a regionbetween the first and second lead frames, and the semiconductor devicesmounted on the first and second lead frames.

The molding may be formed to expose the second surfaces of the first andsecond lead frames.

The molding may be formed on the second surfaces of the first and secondlead frames.

The power module package may further include metal layers for solderingformed on soldering regions of the lead frame(s) made of aluminum in thefirst and second lead frames.

According to another preferred embodiment of the present invention,there is provided a method for fabricating a power module package,including: preparing first and second lead frames which are arranged toface each other, both of or either of the first and second lead framesbeing made of aluminum; forming anodized layers on portions of the leadframe(s) made of aluminum in the first and second lead frames; andmounting semiconductor devices on first surfaces of the first and secondlead frames, respectively.

In the forming of the anodized layers, the anodized layers may be formedon the regions where the semiconductor devices are to be mounted, in thefirst surfaces of the first and second lead frames, and on secondsurfaces of the first and second lead frames.

In the forming of the anodized layers, the anodized layers may be formedon the second surfaces of the first and second lead frames.

In the mounting of the semiconductor devices, the semiconductor devicesmay include a power device and a control device respectively mounted onthe first surfaces of the first lead frame and the second lead frame.

The first lead frame may be made of aluminum, and in the mounting of thesemiconductor devices, the power device may be mounted on the firstsurface of the first lead frame.

The method may further include forming metal layers for circuit on theregions where the semiconductor devices are to be mounted, in theanodized layers, after the forming of the anodized layers and before themounting of the semiconductor devices.

The method may further include forming wires for electric connectionbetween the semiconductor devices and the first and second lead frames,or between the semiconductor devices, after the mounting of thesemiconductor devices.

The method may further include forming a molding covering a regionbetween the first and second lead frames and the semiconductor devicesmounted on the first and second lead frames, after the forming of thewires.

The method may further includes forming metal layers for soldering onsoldering regions of the lead frame(s) made of aluminum in the first andsecond lead frames.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a configuration of a power module package according to afirst preferred embodiment of the present invention;

FIG. 2 shows a configuration of a power module package according to asecond preferred embodiment of the present invention;

FIG. 3 shows a configuration of a power module package according to athird preferred embodiment of the present invention;

FIG. 4 shows a configuration of a power module package according to afourth preferred embodiment of the present invention; and

FIGS. 5 to 12 are process flowcharts of a method for fabricating a powermodule package according to a preferred embodiment of the presentinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Various objects, advantages and features of the invention will becomeapparent from the following description of preferred embodiments withreference to the accompanying drawings.

The terms and words used in the present specification and claims shouldnot be interpreted as being limited to typical meanings or dictionarydefinitions, but should be interpreted as having meanings and conceptsrelevant to the technical scope of the present invention based on therule according to which an inventor can appropriately define the conceptof the term to describe most appropriately the best method he or sheknows for carrying out the invention.

The above and other objects, features and advantages of the presentinvention will be more clearly understood from the following detaileddescription taken in conjunction with the accompanying drawings. In thespecification, in adding reference numerals to components throughout thedrawings, it is to be noted that like reference numerals designate likecomponents even though components are shown in different drawings.Further, when it is determined that the detailed description of theknown art related to the present invention may obscure the gist of thepresent invention, the detailed description thereof will be omitted.Terms used in the specification, ‘first’, ‘second’, etc., can be used todescribe various components, but the components are not to be construedas being limited to the terms.

Hereinafter, preferred embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings.

Power Module Package

FIG. 1 shows a configuration of a power module package according to afirst preferred embodiment of the present invention.

As shown in FIG. 1, a power module package 100 includes first and secondlead frames 111 and 121 which are arranged to face each other and madeof aluminum, anodized layers 112 and 122 respectively formed on portionsof the first and second lead frames 111 and 121, and semiconductordevices 114 and 124 respectively mounted on first surfaces of the firstand second lead frames 111 and 121.

In the preferred embodiments of the present invention, it will bedefined that the first surfaces of the first and second lead frames meansurfaces on which semiconductor devices are to be mounted, and secondsurfaces of the first and second lead frames mean surfaces opposite tothe surfaces on which the semiconductor devices are to be mounted.

Here, the first and second lead frames 111 and 121 are arranged suchthat they are spaced from and symmetrically to each other, as shown inFIG. 1.

The semiconductor devices 114 and 124 include a power device and acontrol device. In the first preferred embodiment, the power device andthe control device are mounted on the first surfaces of the first leadframe 111 and the second lead frame 121, respectively.

As such, in the present embodiment of the present invention, the powerdevice 114 having a high calorific value, such as an insulated gatebipolar transistor (IGBT), a diode, or the like, and the control device124 having a small calorific value, such as a control integrated circuit(IC), are separately mounted on the first lead frame 111 and the secondlead frame 121, respectively. Therefore, it is expected that the heatgenerated from the power device does not have an influence on thecontrol device.

In addition, the power module package 100 further includes metal layers113 and 123 for circuit, which are formed on the regions where thesemiconductor devices 114 and 124 are to be mounted, in the firstsurfaces of the first and second lead frames 111 and 121. Here, as shownin FIG. 1, the metal layers 113 and 123 for circuit are formed betweenthe anodized layers 112 and 122 and the semiconductor devices 114 and124.

In addition, the power module package 100 may further include wires 115formed for electric connection between the semiconductor devices 114 and124 and the first and second lead frames 111 and 121, or between thesemiconductor devices 114 and 124.

In addition, the power module package 100 may further include a molding130 formed for covering a region between the first and second leadframes 111 and 121, and the semiconductor devices 114 and 124 mounted onthe first and second frames 111 and 121.

As shown in FIG. 1, the molding 130 is formed such that the secondsurfaces of the first and second lead frames 111 and 121 are exposed.

According to the present preferred embodiment, the molding 130, whichhas a relatively lower thermal conductivity than the anodized layers 112and 122 and the first and second lead frames 111 and 121 made ofaluminum, is not formed on the second surfaces, which are lower surfacesof the first and second lead frames 111 and 121, thereby effectivelytransferring the heat generated from the semiconductor devices 114 and124 (for example, radiating the heat through the second surfaces to theoutside), resulting in improvement in heat radiation property.

In the first preferred embodiment of the present invention, the anodizedlayers are formed on the regions where the devices are to be mounted, inthe first surfaces of the first and second lead frames 111 and 121, andon the second surfaces of the first and second lead frames 111 and 121.

Here, the second surfaces on which the anodized layers are formed, asshown in FIG. 1, mean bottom surfaces of the first and second leadframes 111 and 121 after forms of the first and second lead frames areformed. The anodized layers may be formed on other regions of the secondsurfaces without limitation thereto, depending on the needs ofoperators.

Here, the anodized layers may be Al₂O₃ layers.

In addition, the power module package 100 may further include metallayers 140 for soldering, which are formed on soldering regions of thelead frame(s) made of aluminum in the first and second lead frames 111and 121.

Here, the metal layers 140 for soldering are configured to supplement ahardly solderable aluminum material, which may be realized by performingplating with a solderable metal material including tin (Sn).

As shown in FIG.1, the metal layers 140 for soldering may be formed onboth ends of the first and second lead frames 111 and 121, which areregions required to be soldered, after forms of the first and secondlead frames 111 and 121 are formed.

As shown in FIG. 1, according to the present preferred embodiment, theanodized layers 112 and 122 are formed on only desired regions of thefirst and second lead frames 111 and 121 made of aluminum materialshaving excellent thermal conductivity, through selective anodeoxidation, and the semiconductor devices 114 and 124 are mounteddirectly thereon. Therefore, due to the anodized layers, high insulatingproperties including high thermal conductivity can be expected.

Further, the lead frame itself, which are made of aluminum materials,functions as a heat radiation substrate, thereby efficientlytransferring the heat from the semiconductor devices 114 and 124,resulting in improvement in heat radiation property.

Furthermore, according to the present preferred embodiment, since aseparate substrate for mounting the semiconductor devices 114 and 124thereon are omitted, the size of the power module package can be reducedand the fabrication costs can be also reduced.

Moreover, in the present preferred embodiment of the present invention,a down-set structure is not applied to the lead frame, therebyfacilitating a packaging process. Here, the down-set structure means astructure in which the region of the lead frame, except a region wherethe semiconductor device is to be mounted, is bent to form a stepheight.

FIG. 2 shows a configuration of a power module package according to asecond preferred embodiment of the present invention.

However, in the second present preferred embodiment, a description forthe same components as those of the first preferred embodiments will beomitted and a description only for components different therefrom willbe provided.

As shown in FIG. 2, a power module package 100 includes first and secondlead frames 111 and 121 which are arranged to face each other and madeof aluminum, anodized layers 112 and 122 respectively formed on portionsof the first and second lead frames 111 and 121, and semiconductordevices 114 and 124 respectively mounted on first surfaces of the firstand second lead frames 111 and 121.

In the preferred embodiment of the present invention, it will be definedthat the first surfaces of the first and second lead frames meansurfaces on which semiconductor devices are to be mounted, and secondsurfaces of the first and second lead frames mean surfaces opposite tothe surfaces on which the semiconductor devices are to be mounted.

In addition, the power module package 100 further includes thesemiconductor devices 114 and 124, a molding 130, and metal layers 140for soldering, and since these are the same as set forth in the firstpreferred embodiment, the detailed description related to these will beomitted.

Although not shown in FIG. 2, in the second preferred embodiment, wiresare not formed between the semiconductor devices 114 and 124 and thefirst and second lead frames to 111 and 121, but formed on other leadframes (not shown) disposed correspondingly to the first and second leadframes, except the first and second lead frames.

The reason of such constitution is to previously prevent a short, whichmay occur at the time of electric connection in a case where the samewires as the first preferred embodiment are embodied in a structurewhere an insulating layer is not formed on the first surfaces of thefirst and second lead frames 111 and 121.

Here, the wires formed between the semiconductor devices 114 and 124 maybe formed in the same manner as the first preferred embodiment. Thereason is that a collector and an emitter may be opened or closed by agate in each of the semiconductor devices 114 and 124.

The above-described anodized layers 112 and 122 may be formed on thesecond surfaces of the first and second lead frames 111 and 121.

Here, the second surfaces on which the anodized layers are formed, asshown in FIG. 2, mean bottom surfaces of the first and second leadframes 111 and 121 after forms of the first and second lead frames areformed. The anodized layers may be formed on other regions of the secondsurfaces without limitation thereto, depending on the needs ofoperators.

In the present preferred embodiment, since the semiconductor devices 114and 124 are mounted directly on the first and second lead frames 111 and121 and then wire bonding is performed, instead of embodying separatecircuit layers on the first and second lead frames 111 and 121, heatradiation property can be improved and the module fabrication costs canbe reduced.

FIG. 3 shows a configuration of a power module package according to athird preferred embodiment of the present invention.

However, in the third present preferred embodiment, a description forthe same components as those of the first preferred embodiments will beomitted and a description only for components different therefrom willbe provided.

As shown in FIG. 3, a power module package 100 includes first and secondlead frames 111 and 121 which are arranged to face each other and madeof aluminum, anodized layers 112 and 122 respectively formed on portionsof the first and second lead frames 111 and 121, and semiconductordevices 114 and 124 respectively mounted on first surfaces of the firstand second lead frames 111 and 121.

In the preferred embodiment of the present invention, it will be definedthat the first surfaces of the first and second lead frames meansurfaces on which semiconductor devices are to be mounted, and secondsurfaces of the first and second lead frames mean surfaces opposite tothe surfaces on which the semiconductor devices are to be mounted.

In addition, the power module package 100 further includes thesemiconductor devices 114 and 124, and metal layers 140 for soldering,and since these are the same as set forth in the first preferredembodiment, the detailed description related to these will be omitted.

Although not shown in FIG. 3, in the third preferred embodiment, wiresare not formed between the semiconductor devices 114 and 124 and thefirst and second lead frames 111 and 121, but formed on other leadframes (not shown) disposed correspondingly to the first and second leadframes, except the first and second lead frames.

The reason of such constitution is to prevent a short beforehand, whichmay occur at the time of electric connection in a case where the samewires as the first preferred embodiment are embodied in a structurewhere an insulating layer is not formed on the first surfaces of thefirst and second lead frames 111 and 121.

Here, the wires formed between the semiconductor devices 114 and 124 maybe formed in the same manner as the first preferred embodiment. Thereason is that a collector and an emitter may be opened or closed by agate in each of the semiconductor devices 114 and 124.

In addition, the power module package 100 of the third preferredembodiment may further include a molding 130 formed for covering aregion between the first and second lead frames 111 and 121, and thesemiconductor devices 114 and 124 mounted on the first and second leadframes 111 and 121.

In addition, the molding 130 is formed on the second surfaces of thefirst and second lead frames 111 and 121.

The reason is to secure an insulation property without loss of heatradiation property, by partially covering the second surfacescorresponding to the bottom surfaces of the first and second lead frames111 and 121 with the molding, as shown in FIG. 3, in a case wheresemiconductor devices requiring high insulation property is applied tothe power module package 100.

Here, the molding 130 formed above the second surfaces of the first andsecond lead frames 111 and 121 needs to be formed such that it canimprove the insulation property without loss of heat radiation propertywithin the range in which a thickness of the power module package isless influenced.

FIG. 4 shows a configuration of a power module package according to afourth preferred embodiment of the present invention.

As shown in FIG. 4, a power module package 100 includes first and secondlead frame 111 and 121 which are arranged to face each other, both oreither of them being made of aluminum, anodized layers 112 and 122respectively formed on portions of the lead frame(s) in the first andsecond lead frames 111 and 121, and semiconductor devices 114 and 124respectively mounted on first surfaces of the first and second leadframes 111 and 121.

In the preferred embodiment of the present invention, it will be definedthat the first surfaces of the first and second lead frames meansurfaces on which semiconductor devices are to be mounted, and secondsurfaces of the first and second lead frames mean surfaces opposite tothe surfaces on which the semiconductor devices are to be mounted.

In the present preferred embodiment, the first lead frame 111 may bemade of aluminum, and a power device 114 may be mounted on a firstsurface of the first lead frame 111.

Meanwhile, the second lead frame 150 may be formed of any material thatcan be generally used as a lead frame material, besides aluminum.

As such, only the first lead frame 111, on which the power device 114having a high calorific value is mounted, is formed of aluminummaterials, thereby imparting selective heat radiation property to thepower module package and reducing the fabrication costs of the powermodule package.

In addition, the power module package 100 further includes thesemiconductor devices 114 and 124, a molding 130, and metal layers 140for soldering, and since these are the same as set forth in the firstpreferred embodiment, the detailed description related to these will beomitted.

Although not shown in FIG. 4, in the fourth preferred embodiment, wiresare not formed between the semiconductor devices 114 and 124 and thefirst and second lead frames 111 and 121, but formed on other leadframes (not shown) disposed correspondingly to the first and second leadframes, except the first and second lead frames.

The reason of such constitution is to prevent a short beforehand, whichmay occur at the time of electric connection in a case where the samewires as the first preferred embodiment are embodied in a structurewhere an insulating layer is not formed on the first surfaces of thefirst and second lead frames 111 and 121.

Here, the wires formed between the semiconductor devices 114 and 124 maybe formed in the same manner as the first preferred embodiment. Thereason is that a collector and an emitter may be opened or closed by agate in each of the semiconductor devices 114 and 124.

Method for Fabricating Power Module Package

FIGS. 5 to 12 are process flowcharts of a method for fabricating a powermodule package according to a preferred embodiment of the presentinvention, which will be described with reference to FIGS. 1 to 4.

In the preferred embodiment of the present invention, it will be definedthat the first surfaces of the first and second lead frames meansurfaces on which semiconductor devices are to be mounted, and secondsurfaces of the first and second lead frames mean surfaces opposite tothe surfaces on which the semiconductor devices are to be mounted.

First, as shown in FIG. 5, first and second lead frames 111 and 121 areprepared to face each other. Both or either of the first and second leadframes 111 and 121 is made of aluminum.

Here, each of the first and second lead frames 111 and 121 may be formedby processing an aluminum plate to have a thickness and a size set byoperators. Here, the thickness of the first and second lead frames 111and 121 may be variously selected from 0.1T to 2.5T depending on thepurpose desired by the operators, or, without limitation thereto, thefirst and second lead frames 111 and 121 may be processed out of therange from 0.1T to 2.5T.

Next, as shown in FIG. 6, anodized layers 112 and 122 are formed onportions of the lead frame(s) made of aluminum in the first and secondlead frames 111 and 121.

In the present preferred embodiment, Al₂O₃ layers may be formed onregions of the lead frames, where circuit layers are to be formed, andon the second surfaces of the lead frames, within a range of 20 μm to200 μm, by using a selective anodizing method, depending on the needs ofoperators, or without limitation thereto, Al₂O₃ layers may be processedout of the above range.

In addition, the anodized layers 112 and 122 may be formed by performinga selective anodizing process on regions, where the anodized layers arerequired, by using photoresist (PR), dry film resist (DFR), a metalmask, and a masking resin. Here, the anodizing process may be performedon the first surfaces and the second surfaces at the same time, oreither the first surfaces or the second surfaces selectively, in thefirst and second lead frames 111 and 121.

As shown in FIGS. 1 and 6, the anodized layers 112 and 122 according tothe first preferred embodiment may be formed on the regions where thesemiconductor devices 114 and 124 are to be mounted, in the firstsurfaces of the first and second lead frames 111 and 121, and on thesecond surfaces of the first and second lead frames 111 and 121.

In addition, as shown in FIGS. 2 and 3, the anodized layers in thesecond and third preferred embodiments may be formed on the secondsurfaces of the first and second lead frames 111 and 121.

Next, as shown in FIG. 7, the metal layers 113 and 123 for circuit areformed on the regions where the semiconductor devices 114 and 124 are tobe mounted, in the anodized layers.

Here, the metal layers 113 and 123 for circuit are formed by forming ametal layer through dry sputtering, or wet electroless and electrolyticplating, and then forming pads and circuit layers through wet chemicaletching and electrolytic etching, or a lift-off process.

In the present preferred embodiment, all the pads and circuit layerswill refer to metal layers 113 and 123 for circuit.

For example, the metal layers 113 and 123 for circuit may be made of anyone of Cu, Cu/Ni, Cu/Ti, Au/Pt/Ni/Cu and Au/Pt/Ni/Cu/Ti, but may be madeof other materials applicable to pads or circuit layers, withoutlimitation thereto. Here, the symbol “/” will be defined to mean “and”.

Here, the description of the step of forming the metal layers 113 and123 for circuit will be omitted due to being the same description in thesecond to fourth preferred embodiments (FIGS. 2 to 4).

Next, as shown in FIG. 8, the semiconductor devices 114 and 124 aremounted on the first surfaces of the first and second lead frames 111and 121.

Here, a binding material of the semiconductor devices 114 and 124 may besolder or organic resin, but, without limitation thereto, any bindingmaterial that can efficiently transfer the heat from the semiconductordevices may be applicable.

Meanwhile, in the first to third preferred embodiments, when thesemiconductor devices are mounted, a power device 114 and a controldevice 124 are mounted on the first surfaces of the first lead frame 111and the second lead frame 121, respectively.

As such, in the present embodiment of the present invention, the powerdevice 114 having a high calorific value, such as, an insulated gatebipolar transistor (IGBT), a diode, or the like, and the control device124 having a small calorific value, such as, a control integratedcircuit (IC), are separately mounted on the first lead frame 111 and thesecond lead frame 121, respectively. Therefore, it is expected that theheat generated from the power device does not influence the controldevice.

In addition, in the fourth preferred embodiment as shown in FIG. 4, thefirst lead frame 111 may be made of aluminum, and the power device 114may be mounted on the first surface of the first lead frame 111.

Meanwhile, the second lead frame 121 may be formed of any material thatcan be generally used as a lead frame material, besides aluminum.

As such, only the first lead frame 111, on which the power device 114having a high calorific value is mounted, is formed of aluminummaterials, thereby imparting selective heat radiation property to thepower module package and reducing fabrication costs of the power modulepackage.

Next, as shown in FIG. 9, wires 115 may be formed for electricconnection between the semiconductor devices 114 and 124 and the firstand second lead frames 111 and 121, or between the semiconductor devices114 and 124.

Next, as shown in FIG. 10, a molding is formed to cover a region betweenthe first and second lead frames 111 and 121, and the semiconductordevices 114 and 124 mounted on the first and second lead frames 111 and121.

In other words, the molding is formed in such a manner that it surroundsthe entire region except regions for connecting with the outside, in thefirst and second lead frames 111 and 121, and the second surfaces of thefirst and second lead frames 111 and 121.

If high insulation property is required, as shown in FIG. 3, the moldingmay be formed on the second surfaces of the first and second lead frames111 and 121.

Next, as shown in FIG. 11, metal layers 140 for soldering are formed insoldering regions of the lead frame(s) made of aluminum in the first andsecond lead frames 111 and 121.

Here, the metal layers 140 for soldering are configured to supplement ahardly solderable aluminum material, which may be realized by using asolderable metal material including tin (Sn).

As shown in FIG. 11, the metal layers 140 for soldering may be formed onboth ends of the first and second lead frames 111 and 121, which areregions required to be soldered.

Next, as shown in FIG.12, forms of the first and second lead frames 111and 121 are formed so that the first and second lead frames 111 and 121are coupled with a printed circuit board (not shown).

For example, as shown in FIG.12, the forms of the first and second leadframes 111 and 121 are formed in such a manner that both sides of thefirst and second lead frames 111 and 121 are bent in a verticaldirection.

According to the present invention, the lead frames and theanode-oxidized metal substrates having excellent heat radiation propertyare formed as a single body, thereby shortening heat radiation path, andthus, the heat generated from the semiconductor devices can beefficiently radiated.

Furthermore, according to the present invention, the power device havinga high calorific value and a control device having a smaller calorificvalue than the power device and vulnerable to heat are separatelyarranged, thereby previously preventing the heat generated from thepower device from influencing the control device and as a result,improving the reliability and the life time driving characteristic ofproducts.

Furthermore, according to the present invention, since the lead framesand the heat radiation substrate are integrated as a single body, thefabrication costs of the power module package can be reduced.

Moreover, according to the present invention, the down-set structure isnot applied to the lead frame, thereby facilitating a packaging processand reducing the process costs.

Although the preferred embodiments of the present invention have beendisclosed for illustrative purposes, they are for specificallyexplaining the present invention and thus a power module packageproviding a method of manufacturing the same according to the presentinvention are not limited thereto, but those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and spirit of the inventionas disclosed in the accompanying claims. Accordingly, suchmodifications, variations or equivalent arrangements should beconsidered to be within the scope of the invention, and the detailedscope of the invention will be disclosed by the accompanying claims.

1. (canceled)
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 5. (canceled) 6.(canceled)
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 9. (canceled)
 10. (canceled) 11.(canceled)
 12. A method for fabricating a power module package,comprising: preparing first and second lead frames which are arranged toface each other, both of or either of the first and second lead framesbeing made of aluminum; forming anodized layers on portions of the leadframe(s) made of aluminum in the first and second lead frames; andmounting semiconductor devices on first surfaces of the first and secondlead frames, respectively.
 13. The method as set forth in claim 12,wherein in the forming of the anodized layers, the anodized layers areformed on the regions where the semiconductor devices are to be mounted,in the first surfaces of the first and second lead frames, and on secondsurfaces of the first and second lead frames.
 14. The method as setforth in claim 12, wherein in the forming of the anodized layers, theanodized layers are formed on the second surfaces of the first andsecond lead frames.
 15. The method as set forth in claim 12, wherein inthe mounting of the semiconductor devices, the semiconductor devicesinclude a power device and a control device respectively mounted on thefirst surfaces of the first lead frame and the second lead frame. 16.The method as set forth in claim 12, wherein the first lead frame ismade of aluminum, and in the mounting of the semiconductor devices, thepower device is mounted on the first surface of the first lead frame.17. The method as set forth in claim 12, further comprising formingmetal layers for circuit on the regions where the semiconductor devicesare to be mounted, in the anodized layers, after the forming of theanodized layers and before the mounting of the semiconductor devices.18. The method as set forth in claim 12, further comprising formingwires for electric connection between the semiconductor devices and thefirst and second lead frames, or between the semiconductor devices,after the mounting of the semiconductor devices.
 19. The method as setforth in claim 18, further comprising forming a molding covering aregion between the first and second lead frames, and the semiconductordevices mounted on the first and second lead frames, after the formingof the wires.
 20. The method as set forth in claim 12, furthercomprising forming metal layers for soldering on soldering regions ofthe lead frame(s) made of aluminum in the first and second lead frames.